Self-compliance multilevel storage characteristic in HfO<sub>2</sub>-based device

Self-compliance multilevel storage characteristic in HfO₂-based device

Gao Xiao-Ping¹, Fu Li-Ping², Chen Chuan-Bing³, Yuan Peng³, Li Ying-Tao^{3, †,}

I–V characteristics of the Ag/HfO₂/Au device (a) for 1st, 10th, 20th, and 30th cycles, (b) after two days. All the measurements are performed at room temperature and under dc sweeping mode.