Binding energy of the donor impurities in GaAs–Ga<sub><bold>1</bold>−<bold><italic>x</italic></bold></sub>Al<sub><bold><italic>x</italic></bold></sub>As quantum well wires with Morse potential in the presence of electric and magnetic fields

Binding energy of the donor impurities in GaAs–Ga_1−xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

Aciksoz Esra¹, Bayrak Orhan^{1, †,}, Soylu Asim²

The binding energies versus different D_e values.