Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

Gong Jiao-Li^{1, 2, 3}, Liu Jin-Song^{1, †,}, Chu Zheng¹, Yang Zhen-Gang¹, Wang Ke-Jia¹, Yao Jian-Quan¹

Carriers distributions of InSb (a) and InAs (b) in different THz fields. The black, red, and blue curves are the percentages of electrons in the Γ, X, and L valleys respectively. The green curve is the percentage of new electrons excited by impact ionization.