Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field
Gong Jiao-Li1, 2, 3, Liu Jin-Song1, †, , Chu Zheng1, Yang Zhen-Gang1, Wang Ke-Jia1, Yao Jian-Quan1
       

(a) Intense THz pulse induced far-field radiation in n-doped bulk samples at room temperature. (b) The illustration for the dynamic mechanisms. Electron energy deviates from that in parabolic band structure in the high THz field. Impact ionization process excites electron–hole pairs from the valence band. The intervalley scattering process causes the electrons to transfer from the Γ valley to satellite valleys.