Carrier transport in III–V quantum-dot structures for solar cells or photodetectors
Wang Wenqi†, , Wang Lu†, , Jiang Yang, Ma Ziguang, Sun Ling, Liu Jie, Sun Qingling, Zhao Bin, Wang Wenxin, Liu Wuming, Jia Haiqiang, Chen Hong‡,
       

The PL spectra and light-to-electricity conversion results of Sample B for the resonant excitation by light with a wavelength of 915 nm under an incident light with a power of 65 mW. (a) PL spectra of Sample A collected under the short- and open-circuit conditions. The PL integrated intensity is reduced by 88% when the circuit is changed from open to short. Meanwhile, the PL peak position is blue-shifted from 1113.8 nm in the open-circuit to 1108.6 nm in the short-circuit. This blue shift in the PL wavelength arises from the change in the Femi energy between the open- and short-circuit conditions. (b) Excitation-power-dependent PL integrated intensity and peak position variation under open- and short-circuit conditions. The ratio between the integrated PL intensity under the short-circuit condition to that under the open-circuit condition monotonically increases from 5% to 11.6%. The PL peak position is blue-shifted from 1118.4 nm to 1114 nm under the open-circuit condition and from 1115 nm to 1109 nm under short-circuit condition. The PL peak position is blue-shifted when the laser power increases because of the band-filling effect. (c) Excitation-power-dependent open-circuit voltage (Voc) and short-circuit current (Jsc) at 150 K. The Jsc is proportional to the incident light intensity, and the Voc is proportional to the logarithm of the incident light intensity. (d) Inversely linearly related circuit current and PL intensity of Sample B under a 65-mW excitation power at 150 K.