Carrier transport in III–V quantum-dot structures for solar cells or photodetectors
Wang Wenqi†, 
, Wang Lu†, , Jiang Yang, Ma Ziguang, Sun Ling, Liu Jie, Sun Qingling, Zhao Bin, Wang Wenxin, Liu Wuming, Jia Haiqiang, Chen Hong‡,
, Wang Lu†, , Jiang Yang, Ma Ziguang, Sun Ling, Liu Jie, Sun Qingling, Zhao Bin, Wang Wenxin, Liu Wuming, Jia Haiqiang, Chen Hong‡, Schematics of two different ten-layer QD structures. (a) Schematic of Sample A. The InAs/GaAs multilayer dots are the active region and are sandwiched between n-type and n-type GaAs; each of them consists of 2.2-ML InAs quantum dots and 50-nm GaAs barrier layer. (b) Schematic of Sample B. It is deposited similarly, except that the n-GaAs is substituted by an equal thickness of p-GaAs. (c) Atomic force microscope (AFM) image of InAs quantum dots. The scan area is 1 μm × 1 μm.
