X-band inverse class-F GaN internally-matched power amplifier
Zhao Bo-Chao1, Lu Yang1, Han Wen-Zhe1, Zheng Jia-Xin2, Zhang Heng-Shuang1, Ma Pei-jun1, †, , Ma Xiao-Hua2, Hao Yue1, 2
       

Measured microwave performance of the power amplifier in continuous mode when input power is 26 dBm. The Pout, gain, and PAE are compared between inverse class-F and class-AB power amplifiers.