X-band inverse class-F GaN internally-matched power amplifier
Zhao Bo-Chao1, Lu Yang1, Han Wen-Zhe1, Zheng Jia-Xin2, Zhang Heng-Shuang1, Ma Pei-jun1, †, 
, Ma Xiao-Hua2, Hao Yue1, 2
, Ma Xiao-Hua2, Hao Yue1, 2 Typical GaN HEMT model. “B” is the drain pad plane and “A” is the current source plane.
