Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices
Yu Jie1, Chen Kun-ji1, †, 
, Ma Zhong-yuan1, Zhang Xin-xin1, Jiang Xiao-fan1, Wu Yang-qing1, Huang Xin-fan1, Oda Shunri2
, Ma Zhong-yuan1, Zhang Xin-xin1, Jiang Xiao-fan1, Wu Yang-qing1, Huang Xin-fan1, Oda Shunri2 Program and erase speed characteristics of Si-NC NVM test key cells with (a) different gate lengths
