Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices
Yu Jie1, Chen Kun-ji1, †, , Ma Zhong-yuan1, Zhang Xin-xin1, Jiang Xiao-fan1, Wu Yang-qing1, Huang Xin-fan1, Oda Shunri2
       

Transfer characteristics of five kinds of Si-NC NVM test key cells with different gate widths and lengths after programming and erasing operations. Here, VD is the drain voltage, ID is the drain current, and VG is the gate voltage.