Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

Jia Yifan¹, Lv Hongliang^{1, †,}, Niu Yingxi², Li Ling², Song Qingwen^{1, 3}, Tang Xiaoyan^{1, ‡,}, Li Chengzhan⁴, Zhao Yanli⁴, Xiao Li⁵, Wang Liangyong⁵, Tang Guangming⁵, Zhang Yimen¹, Zhang Yuming¹

SIMS profiles for the (a) NO and (b) Ar annealed samples. Transition layer width extracted from O/Si and C/Si composition ratio curves and the excess Si relative content with (c) NO and (d) Ar annealing versus oxide thickness.