Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

Jia Yifan¹, Lv Hongliang^{1, †,}, Niu Yingxi², Li Ling², Song Qingwen^{1, 3}, Tang Xiaoyan^{1, ‡,}, Li Chengzhan⁴, Zhao Yanli⁴, Xiao Li⁵, Wang Liangyong⁵, Tang Guangming⁵, Zhang Yimen¹, Zhang Yuming¹

Bidirectional C–V curves of the samples annealed in (a) NO and (b) Ar ambiences for the four times repeated and uninterrupted measurement without suffering from TDBS. (c) The densities of N_niot and N_ot versus measurement sequence.