Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

Jia Yifan¹, Lv Hongliang^{1, †,}, Niu Yingxi², Li Ling², Song Qingwen^{1, 3}, Tang Xiaoyan^{1, ‡,}, Li Chengzhan⁴, Zhao Yanli⁴, Xiao Li⁵, Wang Liangyong⁵, Tang Guangming⁵, Zhang Yimen¹, Zhang Yuming¹

Bidirectional C–V curves obtained from the samples with (a) NO and (b) Ar annealing after TDBS, and the densities of (c) N_ot and (d) N_niot versus bias-stress time.