Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

Jia Yifan¹, Lv Hongliang^{1, †,}, Niu Yingxi², Li Ling², Song Qingwen^{1, 3}, Tang Xiaoyan^{1, ‡,}, Li Chengzhan⁴, Zhao Yanli⁴, Xiao Li⁵, Wang Liangyong⁵, Tang Guangming⁵, Zhang Yimen¹, Zhang Yuming¹

Bidirectional capacitance–voltage characteristics of the samples annealed in Ar and NO ambiences at 10 kHz for the first measurement, in which the arrows indicate the voltage sweep directions.