Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices
Jia Yifan1, Lv Hongliang1, †, 
, Niu Yingxi2, Li Ling2, Song Qingwen1, 3, Tang Xiaoyan1, ‡, , Li Chengzhan4, Zhao Yanli4, Xiao Li5, Wang Liangyong5, Tang Guangming5, Zhang Yimen1, Zhang Yuming1
, Niu Yingxi2, Li Ling2, Song Qingwen1, 3, Tang Xiaoyan1, ‡, , Li Chengzhan4, Zhao Yanli4, Xiao Li5, Wang Liangyong5, Tang Guangming5, Zhang Yimen1, Zhang Yuming1 Bias stress and measurement sequence for the TDBS measurements.
