Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In<italic>x</italic>Ga1−<italic>x</italic>As/In0.52Al0.48As HEMT structures

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_1−xAs/In_0.52Al_0.48As HEMT structures

Zhou Shu-Xing, Qi Ming^†,, Ai Li-Kun, Xu An-Huai

Numerical simulation of the band diagram, donor concentration, and 2DEG density in the region around the 2DEG for the HEMT structure of sample D with the inserted AlAs monolayer at the InAlAs/InGaAs interface and the InAlAs spacer layer.