Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In<italic>x</italic>Ga1−<italic>x</italic>As/In0.52Al0.48As HEMT structures

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_1−xAs/In_0.52Al_0.48As HEMT structures

Zhou Shu-Xing, Qi Ming^†,, Ai Li-Kun, Xu An-Huai

Electron mobility (μ) and 2DEG density (N_s) as a function of δ-doping time measured at (a) room-temperature and (b) 77 K. (c) Si concentration distribution of different δ-doping times in the InAlAs bulk material measured by SIMS. (d) Dependences of Si total flux (N), donor density (N_d), 2DEG density (N_s), and doping efficiency (N_s/N_d) on δ-doping time.