Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In<italic>x</italic>Ga1−<italic>x</italic>As/In0.52Al0.48As HEMT structures

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_1−xAs/In_0.52Al_0.48As HEMT structures

Zhou Shu-Xing, Qi Ming^†,, Ai Li-Kun, Xu An-Huai

Electron mobility (μ_RT) and 2DEG density (N_s) as a function of In content measured at (a) room-temperature and (b) 77 K. Electron mobility (μ_RT) and 2DEG density (N_s) as a function of channel thickness measured at (c) room-temperature and (d) 77 K.