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Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1−xAs/In0.52Al0.48As HEMT structures
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Zhou Shu-Xing , Qi Ming †, ![](http://cpb.iphy.ac.cn/html_resources/images/REemail.gif) , Ai Li-Kun , Xu An-Huai
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Electron mobility (μ) and 2DEG density (Ns) versus growth interruption time measured at (a) room-temperature and (b) 77 K. |
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