Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

Ding Lili^{1, 2, 3, †,}, Gerardin Simone^{2, 3}, Bagatin Marta², Bisello Dario², Mattiazzo Serena², Paccagnella Alessandro^{2, 3}

(a) Comparison of the proton-induced ΔI_ON/I_ON,pre value and the modified x-ray-induced ΔI_ON/I_ON,pre curve for the 600/60 nm core pMOSFET; (b) comparison of ΔI_ON/I_ON,pre induced by the two sources for two I/O pMOSFETs.