Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

Ding Lili^{1, 2, 3, †,}, Gerardin Simone^{2, 3}, Bagatin Marta², Bisello Dario², Mattiazzo Serena², Paccagnella Alessandro^{2, 3}

Comparison of the proton-induced ΔI_ON/I_ON,pre values and the modified x-ray-induced ΔI_ON/I_ON,pre curves for the 120/60 nm core nMOSFET and the 400/280 I/O nMOSFET.