Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

Ding Lili^{1, 2, 3, †,}, Gerardin Simone^{2, 3}, Bagatin Marta², Bisello Dario², Mattiazzo Serena², Paccagnella Alessandro^{2, 3}

(a) Comparison of threshold voltage shift (ΔV_th) of the 120/60 nm core nMOSFET induced by x-ray and protons, as a function of total dose; b): comparison of driving current degradation (ΔI_ON/I_ON,pre) induced by the two sources.