Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

Ding Lili^{1, 2, 3, †,}, Gerardin Simone^{2, 3}, Bagatin Marta², Bisello Dario², Mattiazzo Serena², Paccagnella Alessandro^{2, 3}

(a) I_ds–V_gs curves of a 120/60 nm core nMOSFET before and after x-ray irradiation till 1 Grad (SiO₂) total dose, V_ds = 0.1 V; (b) similar evolution of I_ds–V_gs curves of a 120/60 nm core nMOSFET before and after proton irradiation.