Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors
Ding Lili1, 2, 3, †, , Gerardin Simone2, 3, Bagatin Marta2, Bisello Dario2, Mattiazzo Serena2, Paccagnella Alessandro2, 3
       

(a) Variation of threshold voltage Vth at Vds = 0.1 V for fresh nMOS core transistors featuring different geometries; (b) corresponding variation of driving current ION at Vgs = Vds = 1.2 V.