Pattern dependence in synergistic effects of total dose on single-event upset hardness
Guo Hongxia†, , Ding Lili, Xiao Yao, Zhang Fengqi, Luo Yinhong, Zhao Wen, Wang Yuanming
       

(a) Calibration of TCAD simulatedIds–Vgs curves of W/L = 0.22/0.18 μm fresh nMOSFET with the measured curves; (b) calibration of the simulated off-state leakage after irradiation with the measured data.