Electronic structure and magnetic properties of (Cu, N)-codoped 3C-SiC studied by first-principles calculations
Pan Feng-chun, Chen Zhi-peng, Lin Xue-ling†, 
, Zheng Fu, Wang Xu-ming, Chen Huan-ming
, Zheng Fu, Wang Xu-ming, Chen Huan-ming (a) The total DOS of Cu and N co-doped SiC (Si31CuC31N), (b) PDOS of Cu, (c) PDOS of C near Cu, and (d) PDOS of N. The vertical line at 0 eV is the Fermi level.
