Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

Qin Ping¹, Song Wei-Dong¹, Hu Wen-Xiao¹, Zhang Yuan-Wen¹, Zhang Chong-Zhen¹, Wang Ru-Peng¹, Zhao Liang-Liang¹, Xia Chao¹, Yuan Song-Yang¹, Yin Yi-an^{1, 2}, Li Shu-Ti^{1, 2}, Su Shi-Chen^{1, 2, †,}

(a) Electron current densities versus distance of structures A and B; (b) and (c) hole concentration and electron concentration versus distance of structures A and B at 180 mA.