Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer
Qin Ping1, Song Wei-Dong1, Hu Wen-Xiao1, Zhang Yuan-Wen1, Zhang Chong-Zhen1, Wang Ru-Peng1, Zhao Liang-Liang1, Xia Chao1, Yuan Song-Yang1, Yin Yi-an1, 2, Li Shu-Ti1, 2, Su Shi-Chen1, 2, †, 
(a) Total powers versus current of structures A and B. (b) Simulation results of internal quantum efficiency (IQE) versus current for structures A and B.
