Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
Xi Xiao-Wen†, 
, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang, Shi Chun-Lei
, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang, Shi Chun-Lei Photomicrographs of damaged devices: (a) sample 11# and (b) sample 12#, with microwave pulse.[
