Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
Xi Xiao-Wen†, 
, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang, Shi Chun-Lei
, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang, Shi Chun-Lei Distributions of the device parameters: (a) electric field (V/cm), (b) current density (A/cm2), and (c) temperature (K), under 11.5 V injection voltage.
