Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Liu Yu-Rong1, 2, †, , Zhao Gao-Wei1, Lai Pai-To3, Yao Ruo-He1, 2
       

Transfer characteristics of the ZnO-based TFTs with single- and dual-active-layer structures at VDS = 30 V under a drain-bias stress of 20 V. Panel (a) is for the single-layered ZnO structure, panel (b) the single-layered SZO structure, and panel (c) the double-layered SZO/ZnO structure.