Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

Liu Yu-Rong^{1, 2, †,}, Zhao Gao-Wei¹, Lai Pai-To³, Yao Ruo-He^{1, 2}

(a) Output characteristics of the SZO TFT with 2.3% Si content, (b) transfer characteristics of the SZO-TFTs with different Si content at V_DS = 30 V.