Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Liu Yu-Rong1, 2, †, 
, Zhao Gao-Wei1, Lai Pai-To3, Yao Ruo-He1, 2
, Zhao Gao-Wei1, Lai Pai-To3, Yao Ruo-He1, 2 AFM images of the SZO thin films for Si content values of (a) 2.3%, (b) 3.8%, and (c) 7.9%.
