Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Liu Yu-Rong1, 2, †, 
, Zhao Gao-Wei1, Lai Pai-To3, Yao Ruo-He1, 2
, Zhao Gao-Wei1, Lai Pai-To3, Yao Ruo-He1, 2 Optical transmission spectra of the SZO thin films with different Si contents. The inset shows the direct optical band gaps of the SZO films.
