Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Liu Yu-Rong1, 2, †, 
, Zhao Gao-Wei1, Lai Pai-To3, Yao Ruo-He1, 2
, Zhao Gao-Wei1, Lai Pai-To3, Yao Ruo-He1, 2 Schematic diagram of TFT devices preparing (a) ZnO or SZO thin film as a single active layer, (b) SZO/ZnO thin film as a double active layer.
