Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level

Lun Zhi-Yuan¹, Li Yun¹, Zhao Kai², Du Gang^{1, †,}, Liu Xiao-Yan¹, Wang Yi¹

Capture and emission time constants used to calculate TAT current density along tunneling oxide and the related normalized TAT current contribution for 375-K retention simulation at 10⁷ s.