Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level
Lun Zhi-Yuan1, Li Yun1, Zhao Kai2, Du Gang1, †, 
, Liu Xiao-Yan1, Wang Yi1
, Liu Xiao-Yan1, Wang Yi1 Threshold voltage shifts after 108 s under various retention temperatures with increasing the levels of tunneling oxide degradation.
