Fabrication of Al/AlO<sub><italic>x</italic></sub>/Al junctions using pre-exposure technique at 30-keV e-beam voltage

Fabrication of Al/AlO_x/Al junctions using pre-exposure technique at 30-keV e-beam voltage

Lan Dong¹, Xue Guangming^{1, †,}, Liu Qiang¹, Tan Xinsheng¹, Yu Haifeng^{1, 2, ‡,}, Yu Yang^{1, 2}

(a) Rabi oscillation and (b) relaxation time T₁ of a three-dimensional transmon sample which is made by using pre-exposure technique.