Fabrication of Al/AlOx/Al junctions using pre-exposure technique at 30-keV e-beam voltage
Lan Dong1, Xue Guangming1, †, , Liu Qiang1, Tan Xinsheng1, Yu Haifeng1, 2, ‡, , Yu Yang1, 2
       

Cross-section schematics of pre-exposure technique. (a) The first e-beam lithography, with MAA dose which has no effect on the top PMMA layer, writes the bottom MAA layer. The second one with PMMA dose writes the top layer. (b) After development in the developer (MIBK:IPA = 1:3), the controlled undercuts are formed.