Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

Exciton–phonon interaction in Al_0.4Ga_0.6N/Al_0.53Ga_0.47N multiple quantum wells

Liu Ya-Li¹, Jin Peng^{1, †,}, Liu Gui-Peng¹, Wang Wei-Ying², Qi Zhi-Qiang³, Chen Chang-Qing³, Wang Zhan-Guo¹

Huang–Rhys factor S versus temperature for the Al_0.4Ga_0.6N/Al_0.53Ga_0.47N MQWs. The solid line gives the Huang–Rhys factor S with a mean value of 0.22 from 10 K to 120 K.