Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

Exciton–phonon interaction in Al_0.4Ga_0.6N/Al_0.53Ga_0.47N multiple quantum wells

Liu Ya-Li¹, Jin Peng^{1, †,}, Liu Gui-Peng¹, Wang Wei-Ying², Qi Zhi-Qiang³, Chen Chang-Qing³, Wang Zhan-Guo¹

Ratio of the PL emission intensity of n-th order phonon replicas I_n to that of the zero phonon line I₀, I_n/I₀, versus n at 10 K for the Al_0.4Ga_0.6N/Al_0.53Ga_0.47N MQWs. The ratio I_n/I₀ is fitted to I_n = I₀Sⁿ/n! from which the Huang–Rhys factor S can be obtained.