Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis
Zhang Man-Hong†, 
Measured (solid lines) and fitted (symbols) CPD profiles: (a) 50 °C, (b) 90 °C.
Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis |
|
Zhang Man-Hong†,
|
Measured (solid lines) and fitted (symbols) CPD profiles: (a) 50 °C, (b) 90 °C. |
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