Electron trapping properties at HfO<sub>2</sub>/SiO<sub>2</sub> interface, studied by Kelvin probe force microscopy and theoretical analysis

Electron trapping properties at HfO₂/SiO₂ interface, studied by Kelvin probe force microscopy and theoretical analysis

Zhang Man-Hong^†,

Measured (solid lines) and fitted (symbols) CPD profiles at RT: (a) injection at RT, (b) injection at 70 °C.