Electron trapping properties at HfO<sub>2</sub>/SiO<sub>2</sub> interface, studied by Kelvin probe force microscopy and theoretical analysis

Electron trapping properties at HfO₂/SiO₂ interface, studied by Kelvin probe force microscopy and theoretical analysis

Zhang Man-Hong^†,

Time dependence of normalized integrated CPD measured at different temperatures. The inset shows the horizontal cross-section through the central point of the injection square. For both curves RT and RT2, CPD signals are measured at 27 °C. Other conditions are given in the text.