Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe<sub>12</sub>O<sub>22</sub>

Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂

Wang Fen^{1, 2}, Shen Shi-Peng², Sun Young^{2, †,}

Magnetic field profiles of electric polarization at 20 K. For the P–H data labeled as “proper ± 300 kV/m poling”, electric field were applied at 0 T and then removed at μ₀H = 1.5 T. While for the P–H data labeled as “memory effect”, electric field was switched off after sweeping H up to 4 T. After these procedures, magnetoelectric current was measured during H increasing or decreasing sweeps.