Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Zhang Jia-Qi^{1, 2}, Wang Lei¹, Li Liu-An³, Wang Qing-Peng^{1, 2}, Jiang Ying^{1, 2}, Zhu Hui-Chao², Ao Jin-Ping^{1, †,}

Output (a) and transfer (b) characteristics of the SAG HFET and the gate-first HFET.