Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate
Zhang Jia-Qi
1, 2
, Wang Lei
1
, Li Liu-An
3
, Wang Qing-Peng
1, 2
, Jiang Ying
1, 2
, Zhu Hui-Chao
2
, Ao Jin-Ping
1, †,
I
–
V
characteristics of (a) the circular TiN Schottky diode and (b) the SAG HFET.