Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate
Zhang Jia-Qi1, 2, Wang Lei1, Li Liu-An3, Wang Qing-Peng1, 2, Jiang Ying1, 2, Zhu Hui-Chao2, Ao Jin-Ping1, †, 
Typical low (a) and high (b) magnification SEM image of the SAG HFET.
