Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Zhang Jia-Qi^{1, 2}, Wang Lei¹, Li Liu-An³, Wang Qing-Peng^{1, 2}, Jiang Ying^{1, 2}, Zhu Hui-Chao², Ao Jin-Ping^{1, †,}

Fitting result of the conductance against the etching time for the 4-point TiN pattern.