Magnetic field dependence of (a) ρ_yx and (b) ρ_xx for bare (green lines), 3-nm AlO_x/5-nm LiF-capped (blue lines), and 10-nm AlO_x(ALD)/0.5-nm AlO_x/5-nm LiF-capped (black lines) 5-QL Cr_0.15(Bi_0.1Sb_0.9)_1.85Te₃ films with gate voltage of −8 V, 40 V, and 24 V respectively. (c) V_g dependence of ρ_yx at zero magnetic field for bare (green line), 3-nm AlO_x/5-nm LiF-capped (blue line), and 10-nm AlO_x(ALD)/0.5-nm AlO_x/5-nm LiF-capped (black line) 5-QL Cr_0.15(Bi_0.1Sb_0.9)_1.85Te₃ films. Magnetic field dependence of ρ_yx and ρ_xx (V_g = 12 V), V_g dependence of ρ_yx at zero magnetic field of 3-nm AlO_x/5-nm LiF-capped 5-QL Cr_0.15(Bi_0.1Sb_0.9)_1.85Te₃ film, which is kept in argon glove box for 17 days, are shown with red lines in panels (a), (b), and (c). All the measurements are conducted at 1.5 K.